2SB717 Datasheet. Specs and Replacement
Type Designator: 2SB717 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 70 MHz
Collector Capacitance (Cc): 5.5 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO202
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2SB717 Substitution
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2SB717 datasheet
CHENMKO ENTERPRISE CO.,LTD 2SB717GP SURFACE MOUNT PNP Silicon Power Transistor VOLTAGE 12 Volts CURRENT 3 Ampere FEATURE * Small flat package. (SC-62/SOT-89) * Peak pulse current 10A * Extremely low saturation voltage SC-62/SOT-89 * PC= 2.0 W * Extremely low equivalent On-resistance CONSTRUCTION 4.6MAX. 1.6MAX. * PNP Switching Transistor 1.7MAX. 0.4+0.05 +0.08 0.45-0.05 +0.... See More ⇒
Transistors 2SB0710, 2SB0710A Silicon PNP epitaxial planer type Unit mm 0.40+0.10 For general amplification 0.05 0.16+0.10 0.06 3 Complementary to 2SD0602 and 2SD0602A Features Large collector current IC 1 2 Mini type package, allowing downsizing of the equipment and (0.95) (0.95) automatic insertion through the tape packing and the magazine 1.9 0.1 2.90+0.20 ... See More ⇒
Transistor 2SB710, 2SB710A Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD602 and 2SD602A +0.2 2.8 0.3 Features +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Large collector current IC. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 packing. 3 Absolute Maximum... See More ⇒
Detailed specifications: 2SB710A, 2SB711, 2SB712, 2SB713, 2SB714, 2SB715, 2SB716, 2SB716A, 2N2907, 2SB718, 2SB719, 2SB720, 2SB721, 2SB722, 2SB723, 2SB724, 2SB725
Keywords - 2SB717 pdf specs
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History: 2SC1810
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