2SB719 Specs and Replacement
Type Designator: 2SB719
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 32 pF
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO220
2SB719 Transistor Equivalent Substitute - Cross-Reference Search
2SB719 detailed specifications
2sb719.pdf
isc Silicon PNP Power Transistor 2SB719 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD759 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=2... See More ⇒
2sb710.pdf
Transistors 2SB0710, 2SB0710A Silicon PNP epitaxial planer type Unit mm 0.40+0.10 For general amplification 0.05 0.16+0.10 0.06 3 Complementary to 2SD0602 and 2SD0602A Features Large collector current IC 1 2 Mini type package, allowing downsizing of the equipment and (0.95) (0.95) automatic insertion through the tape packing and the magazine 1.9 0.1 2.90+0.20 ... See More ⇒
2sb710 e.pdf
Transistor 2SB710, 2SB710A Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD602 and 2SD602A +0.2 2.8 0.3 Features +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Large collector current IC. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 packing. 3 Absolute Maximum... See More ⇒
Detailed specifications: 2SB712 , 2SB713 , 2SB714 , 2SB715 , 2SB716 , 2SB716A , 2SB717 , 2SB718 , 2SC828 , 2SB720 , 2SB721 , 2SB722 , 2SB723 , 2SB724 , 2SB725 , 2SB726 , 2SB727 .
Keywords - 2SB719 transistor specs
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History: 2SB720 | 2SB718
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