2SB722 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB722
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO3
2SB722 Transistor Equivalent Substitute - Cross-Reference Search
2SB722 Datasheet (PDF)
2sb722.pdf
isc Silicon PNP Power Transistors 2SB722DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sb726 e.pdf
Transistor2SB726Silicon PNP epitaxial planer typeFor general amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.High collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 80 V +0.2 +0.20.45 0.1 0.45 0.1Collector to emitter voltage VCEO 80 V1.27 1
2sb726.pdf
Transistor2SB0726 (2SB726)Silicon PNP epitaxial planer typeFor general amplificationUnit: mmFeaturesHigh foward current transfer ratio hFE.High collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 80 VCollector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 VCollector curr
2sb727.pdf
2SB727(K)Silicon PNP EpitaxialApplicationMedium speed and power switching complementary pair with 2SD768(K)OutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 1 k 400 23(Typ) (Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage
2sb727k.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB727K DESCRIPTION With TO-220C package Complement to type 2SD768K DARLINGTON APPLICATIONS For medium speed and power switching applications PINNING PIN DESCRIPTION1 Base Collector; connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITV
2sb720.pdf
isc Silicon PNP Power Transistor 2SB720DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD760Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and TV vertical deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(Ta=2
2sb724.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB724DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFEFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applica
2sb727.pdf
isc Silicon PNP Darlington Power Transistor 2SB727DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -3AFE CCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -3ACE(sat) CComplement to Type 2SD768Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI
2sb723.pdf
isc Silicon PNP Power Transistors 2SB723DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CHigh Current CapabilityComplement to Type 2SD753Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIM
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
