All Transistors. 2SB738 Datasheet

 

2SB738 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB738
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 16 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92

 2SB738 Transistor Equivalent Substitute - Cross-Reference Search

   

2SB738 Datasheet (PDF)

 ..1. Size:31K  hitachi
2sb738 2sb739.pdf

2SB738 2SB738

2SB738, 2SB739Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD787 and 2SD788OutlineTO-92MOD1. Emitter2. Collector3. Base3212SB738, 2SB739Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SB738 2SB739 UnitCollector to base voltage VCBO 20 20 VCollector to emitter voltage VCEO 16 20 VEmitter to base v

 9.1. Size:166K  nec
2sb734.pdf

2SB738 2SB738

 9.2. Size:183K  nec
2sb736 2sb736 2sb736a.pdf

2SB738 2SB738

 9.3. Size:164K  nec
2sb733.pdf

2SB738 2SB738

 9.4. Size:1246K  rohm
2sb737 2sb821.pdf

2SB738 2SB738

 9.5. Size:39K  no
2sb731.pdf

2SB738

 9.6. Size:1155K  kexin
2sb736a.pdf

2SB738 2SB738

SMD Type TransistorsPNP Transistors2SB736ASOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 High DC current gain hFE:200(TYP) Complimentary to 2SD780A.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter

 9.7. Size:1127K  kexin
2sb736.pdf

2SB738 2SB738

SMD Type TransistorsPNP Transistors2SB736SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 High DC current gain hFE:200(TYP) Complimentary to 2SD780.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter V

 9.8. Size:187K  inchange semiconductor
2sb731.pdf

2SB738 2SB738

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB731DESCRIPTIONCollector-Emitter Sustaining Voltage -: V = -50V(Min)CEO(SUS)Low Collector to Emitter Saturation Voltage: V = -0.6V(Max.)@I = -1ACE(sat) CDC Current Gain-: h = 135-600@I = -0.1AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned fo

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SC4793 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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