2SB738 Todos los transistores

 

2SB738 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB738
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.9 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 16 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 40 MHz
   Capacitancia de salida (Cc): 50 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO92

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2SB738 Datasheet (PDF)

 ..1. Size:31K  hitachi
2sb738 2sb739.pdf

2SB738
2SB738

2SB738, 2SB739Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD787 and 2SD788OutlineTO-92MOD1. Emitter2. Collector3. Base3212SB738, 2SB739Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SB738 2SB739 UnitCollector to base voltage VCBO 20 20 VCollector to emitter voltage VCEO 16 20 VEmitter to base v

 9.1. Size:166K  nec
2sb734.pdf

2SB738
2SB738

 9.2. Size:183K  nec
2sb736 2sb736 2sb736a.pdf

2SB738
2SB738

 9.3. Size:164K  nec
2sb733.pdf

2SB738
2SB738

 9.4. Size:1246K  rohm
2sb737 2sb821.pdf

2SB738
2SB738

 9.5. Size:39K  no
2sb731.pdf

2SB738

 9.6. Size:1155K  kexin
2sb736a.pdf

2SB738
2SB738

SMD Type TransistorsPNP Transistors2SB736ASOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 High DC current gain hFE:200(TYP) Complimentary to 2SD780A.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter

 9.7. Size:1127K  kexin
2sb736.pdf

2SB738
2SB738

SMD Type TransistorsPNP Transistors2SB736SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 High DC current gain hFE:200(TYP) Complimentary to 2SD780.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter V

 9.8. Size:187K  inchange semiconductor
2sb731.pdf

2SB738
2SB738

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB731DESCRIPTIONCollector-Emitter Sustaining Voltage -: V = -50V(Min)CEO(SUS)Low Collector to Emitter Saturation Voltage: V = -0.6V(Max.)@I = -1ACE(sat) CDC Current Gain-: h = 135-600@I = -0.1AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned fo

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: BLY93A | BLX61 | BD956F

 

 
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History: BLY93A | BLX61 | BD956F

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