2SB776 Datasheet and Replacement

UNISONIC TECHNOLOGIES CO., LTD 2SB776 PNP PLANAR TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB776 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High Current Output Up to 3A * Low Saturation Voltage * Complement to 2SD886 ORDERING INFORMATION Ordering N

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors2SB776 TRANSISTOR (PNP)TO-126FEATURES High Current Output Up to 3A 1. EMITTER Low Saturation Voltage Power Dissipation 2. COLLECTOR3. BASE Equivalent Circuit B776=Device code Solid dot = Green molding compound device, if none, the normal device B776 XXXX=Code

JMnic Product Specification Silicon PNP Power Transistors 2SB776 DESCRIPTION With TO-3PN package Complement to type 2SD896 Wide area of safe operation APPLICATIONS 100V/7A, AF 40W output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Tc=25)

2SB776(PNP)TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features High current output up to 3A Low saturation voltage Power dissipation 2.5007.4002.9001.1007.8001.500MAXIMUM RATINGS (TA=25 unless otherwise noted ) 3.900Symbol Parameter Value Units3.0004.100VCBO Collector-Base Voltage -50 V 10.600 3.2000.0000.300VCEO Collec

2SB7762SD8862SB776 PNP Epitaxial Planar Transistors2SD886 NPN Epitaxial Planar TransistorsTO-1261.EMITTERP b Lead(Pb)-Free2.COLLECTOR3.BASE123ABSOLUTE MAXIMUM RATINGS (Ta=25C)Rating Symbol PNP/2SB776 UnitNPN/2SD886VCEO -50 50 VCollector-Emitter VoltageVCBO -50 50 VCollector-Base VoltageVEBO -5.0 5.0 VEmitter-Base VoltageIC -3.0 3.0 ACollector Curren

2SB772PNP medium power transistorFeatures High current Low saturation voltage Complement to 2SD882Applications12 Voltage regulation3 Relay driver SOT-32(TO-126) Generic switch Audio power amplifier DC-DC converterFigure 1. Internal schematic diagramDescriptionThe device is a PNP transistor manufactured by using planar Technology re

2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

Transistors2SB0774 (2SB774)Silicon PNP epitaxial planar typeFor low-frequency amplificationUnit: mm5.00.2 4.00.2 Features High emitter-base voltage (Collector open) VEBO Protective diodes and resistances between emitter and base can beomitted.0.70.1 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit0.45+0.15 0.45+0.150.1 0.1Coll

Transistor2SB779Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mm+0.22.8 0.3+0.25Features0.65 0.15 1.5 0.05 0.65 0.15Low collector to emitter saturation voltage VCE(sat).Satisfactory linearity of hFE at the low collector voltage.1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape pac

Transistor2SB774Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh emitter to base voltage VEBO.Protective diodes and resistances between emitter and base canbe omitted.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 30 V0.45 0.1 0.45 0.1Collector t

UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 1 DESCRIPTION SOT-223 SOT-89The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A 1* Low saturation voltage * Complement to 2SD882S TO-92

UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882 ORDERING INFORMATION Ordering Number

UTC 2SB772L PNP EPITAXIAL SILICON TRANSISTORMEDIUM POWER LOW VOLTAGETRANSISTORDESCRIPTIONThe UTC 2SB772L is a medium power low voltagetransistor, designed for audio power amplifier, DC-DCconverter and voltage regulator.FEATURES*High current output up to 3A*Low saturation voltage*Complement to 2SD882LTO-92L1:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS ( Ta=25C

2SB778 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power DissipationABSOLUTE MAXIMUM RATING (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -10 A Collector Dissipation P

JMnic Product Specification Silicon PNP Power Transistors 2SB778 DESCRIPTION With TO-3PML package Complement to type 2SD998 APPLICATIONS High power amplifier applications Recommended for 45~50W audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings (Ta=2

JMnic Product Specification Silicon PNP Power Transistors 2SB772 DESCRIPTION With TO-126 package Complement to type 2SD882 APPLICATIONS Suited for the output stage of 3 watts audio amplifier ,voltage regulator ,DC- DC converter and relay driver PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25

2SB7722SD882PNP / NPN Epitaxial Planar TransistorsTO-126P b Lead(Pb)-Free1.EMITTER2.COLLECTOR3.BASE123ABSOLUTE MAXIMUM RATINGS (Ta=25C)Rating Symbol PNP/2SB772 UnitNPN/2SD882VCEO -30 30 VdcCollector-Emitter VoltageVCBO -40 40 VdcCollector-Base VoltageVEBO -5.0 5.0 VdcEmitter-Base VoltageIC(DC) -3.0 3.0 AdcCollector Current(DC)IC(Pulse) -7.0 7.0 Adc

2SB772D Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features ,h FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

2SB772S Rev.A May.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features VCE(sat),,h FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

2SB772T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features V ,,h CE(sat) FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

2SB772N(BR3CA772N) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-223 PNP Silicon PNP transistor in a SOT-223 Plastic Package. / Features ,h FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

2SB772 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126F PNP Silicon PNP transistor in a TO-126F Plastic Package. / Features ,h FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

2SB772L(BR3CA772L) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features , h FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

2SB772B(3CA772B) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE

2SB772M(BR3CG772M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , hFE Low saturation voltage, excellent hFE linearity and high hFE. / Applications ,,

ST 2SB772R PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 6 V -IC Collector Current 3 A OTotal Power Dissipati

2SB772U PNP Silicon Epitaxial Power Transistor These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Collector Current 3 A-ICPPeak Collector Current

ST 2SB772T PNP Silicon Epitaxial Power Transistor These devices are intended for use in audio frequency power amplifier and low speed switching applications ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current

ST 2SB772U PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Collector Current 3 A-ICPPeak Collector Curre

LESHAN RADIO COMPANY, LTD.PNPSURFACEMOUNTTRANSISTORL2SB772Q L2SB772PWe declare that the material of product compliance with RoHS requirements.4 123DEVICE MARKING AND ORDERING INFORMATIONSOT-89Device Marking ShippingL2SB772Q 72Q 2500/Tape&Reel2,4L2SB772P 72P 2500/Tape&ReelCOLLECTOR1MAXIMUM RATINGS(Ta=25C)BASEParameter Symbol Limits Unit3Collector-bas

DIP Type TransistorsPNP Transistors2SB772TO-126Unit:mm8.00 0.30 3.25 0.20 Features PNP transistor High current output up to 3A Low Saturation Voltage3.20 0.10 Complement to 2SD882(1.00) (0.50)0.75 0.101.75 0.201.60 0.100.75 0.101 2 3#1+0.102.28TYP 2.28TYP 0.50 0.05[2.280.20] [2.280.20]1. Base2. Collector3. Emitte

SMD Type TransistorsPNP Transistors2SB772A Features1.70 0.1 PNP transistor High current output up to 3A Low Saturation Voltage Complement to 2SD882A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO -70 VCollector to Emitter Voltage VCEO -60 VEmitter to Base V

SMD Type TransistorsTPNP Transistor2SB772TO-252Unit: mm Features+0.15 +0.16.50-0.15 2.30-0.1 PNP transistor High current output up to 3A+0.2 +0.85.30-0.2 0.50-0.7 Low Saturation Voltage4 Complement to 2SD8820.127+0.1 max0.80-0.1231+0.12.3 0.60-0.11. BASE+0.154.60-0.152. COLLECTOR3. EMITTER4. COLLECTOR Absolute Maximum Rati

SMD Type TransistorsPNP Transistors2SB779SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=-0.5A1 2 Collector Emitter Voltage VCEO=-20V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Colle

CHENMKO ENTERPRISE CO.,LTD2SB772GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (SC-62/SOT-89)SC-62/SOT-89* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time: tstg= 1.0uSec (typ.)* PC= 1.5 W (mounted on ceramic substrate).4.6MAX. 1.6MAX.

CHENMKO ENTERPRISE CO.,LTD2SB772ZGPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (SC-73/SOT-223)SC-73/SOT-223* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time: tstg= 1.0uSec (typ.)1.65+0.15* PC= 1.5 W (mounted on ceramic substrate).6.5

2SB772T(3CA772T) PNP /SILICON PNP TRANSISTOR : 3 ,,/Purpose: Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. : V ,,h /Features: Low saturation voltage, excellent h FECE(sat) FElinearity and high h . FE

2SB772I(3CA772I) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h . FEFeatures: Low saturation voltage, excellent h linearity and high h . FE FE

2SB772L(3CA772L) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE

2SB772S(3CA772S) PNP /SILICON PNP TRANSISTOR : 3 ,,/Purpose: Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. : V ,,h /Features: Low saturation voltage, excellent h FECE(sat) FElinearity and high h . FE

2SB772D(3CA772D) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h ./Features: Low saturation voltage, excellent h linearity FEFEand high h . FE

2SB772M(3CG772M) PNP /SILICON PNP TRANSISTOR :,, Purpose: Output stage of audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE/Absolut

2SB772B(3CA772B) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE

2SB772I(3CA772I) PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h . FEFeatures: Low saturation voltage, excellent h linearity and high h . FE FE

www.msksemi.com2SB772-MSSemiconductor CompianceSemiconductor Compiance1. BASE TRANSISTOR (PNP) 2. COLLETOR FEATURES Low speed switching 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A

www.msksemi.com2SB772Semiconductor CompianceSemiconductor CompianceTRANSISTOR (PNP) FEATURES Low Speed Switching213TO-252-2L MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V 1. BASEVEBO Emitter-Base Voltage -6 V 2. COLLECTOR IC Collector Current -Continuous -3

2SB772SQSilicon PNP Power TransistorFeatures High current output up to 3A Low saturation voltage Complement to 2SD882SQSOT-89PIN1Base PIN 2Collector PIN 3EmitterApplicationsThese devices are intended for use in audio frequency power amplifier and low speed switching applicationsAbsolute Maximum Ratings (Ta=25unless otherwise specified)Parameter Symbo

B772PNP Transistors Features3 PNP transistor High current output up to 3A2 Low Saturation Voltage1.Base1 Complement to 2SD8822.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO -40 VCollector to Emitter Voltage VCEO -30 VEmitter to Base Voltage VEBO -6 V

2SB772U PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications MARKING:B772 OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Collector Current 3 A-ICPPeak C

2SB772SQSilicon PNP Power TransistorFeatures High current output up to 3A Low saturation voltage Complement to 2SD882SQSOT-89PIN1Base PIN 2Collector PIN 3EmitterApplicationsThese devices are intended for use in audio frequencypower amplifier and low speed switching applicationsAbsolute Maximum Ratings (Ta=25unless otherwise specified)Parameter Symbol

SPTECH Product Specification2SB778SPTECH Silicon PNP Power TransistorDESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -5ACE(sat) CGood Linearity of hFEAPPLICATIONSDesigned for chopper regulator, switch and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -70 VCBOV Collector-E

isc Silicon PNP Power Transistor 2SB775DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -85V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD895Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 35W audio frequency output applications.ABSOL

isc Silicon PNP Power Transistor 2SB772DESCRIPTIONHigh Collector Current -I = -3ACHigh Collector-Emitter Breakdown Voltage-: V = -30V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD882Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in the output stage of 3 watts a