2SB806KQ Specs and Replacement
Type Designator: 2SB806KQ
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 35 MHz
Collector Capacitance (Cc): 17 pF
Forward Current Transfer Ratio (hFE), MIN: 135
Package: SOT89
2SB806KQ Substitution
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2SB806KQ datasheet
SMD Type Transistors SMD Type PNP Tr ansistors 2SB806 Features Classification of hfe(1) 1.70 0.1 High collector to emitter voltage VCEO -120V. = 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V Emitter-base voltage VEBO -5 V C... See More ⇒
Detailed specifications: 2SB804AV , 2SB804AW , 2SB805 , 2SB805KK , 2SB805KL , 2SB805KM , 2SB806 , 2SB806KP , 2SC4793 , 2SB806KR , 2SB807 , 2SB808 , 2SB808F , 2SB808G , 2SB81 , 2SB810 , 2SB811 .
History: CSC2003L
Keywords - 2SB806KQ pdf specs
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History: CSC2003L
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