2SB806KR Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB806KR
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 35 MHz
Collector Capacitance (Cc): 17 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SOT89
2SB806KR Transistor Equivalent Substitute - Cross-Reference Search
2SB806KR Datasheet (PDF)
8.2. Size:817K kexin
2sb806.pdf
2sb806.pdf
SMD Type TransistorsSMD TypePNP Transistors2SB806 Features Classification of hfe(1)1.70 0.1 High collector to emitter voltage: VCEO -120V. =0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -120 VCollector-emitter voltage VCEO -120 VEmitter-base voltage VEBO -5 VC
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
