2SB806KR Specs and Replacement

Type Designator: 2SB806KR

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 35 MHz

Collector Capacitance (Cc): 17 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: SOT89

 2SB806KR Substitution

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2SB806KR datasheet

 8.1. Size:234K  nec

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2SB806KR

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 8.2. Size:817K  kexin

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2SB806KR

SMD Type Transistors SMD Type PNP Tr ansistors 2SB806 Features Classification of hfe(1) 1.70 0.1 High collector to emitter voltage VCEO -120V. = 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V Emitter-base voltage VEBO -5 V C... See More ⇒

 8.3. Size:661K  cn shikues

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2SB806KR

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Detailed specifications: 2SB804AW, 2SB805, 2SB805KK, 2SB805KL, 2SB805KM, 2SB806, 2SB806KP, 2SB806KQ, MJE340, 2SB807, 2SB808, 2SB808F, 2SB808G, 2SB81, 2SB810, 2SB811, 2SB812

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