All Transistors. 2SB806KR Datasheet

 

2SB806KR Datasheet and Replacement


   Type Designator: 2SB806KR
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.7 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 35 MHz
   Collector Capacitance (Cc): 17 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: SOT89
 

 2SB806KR Substitution

   - BJT ⓘ Cross-Reference Search

   

2SB806KR Datasheet (PDF)

 8.1. Size:234K  nec
 2sb805 2sb806.pdf pdf_icon

2SB806KR

 8.2. Size:817K  kexin
 2sb806.pdf pdf_icon

2SB806KR

SMD Type TransistorsSMD TypePNP Transistors2SB806 Features Classification of hfe(1)1.70 0.1 High collector to emitter voltage: VCEO -120V. =0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -120 VCollector-emitter voltage VCEO -120 VEmitter-base voltage VEBO -5 VC

 8.3. Size:661K  cn shikues
 2sb806-kr 2sb806-kq 2sb806-kp.pdf pdf_icon

2SB806KR

SHOW MORE

Datasheet: 2SB804AW , 2SB805 , 2SB805KK , 2SB805KL , 2SB805KM , 2SB806 , 2SB806KP , 2SB806KQ , 2SA1837 , 2SB807 , 2SB808 , 2SB808F , 2SB808G , 2SB81 , 2SB810 , 2SB811 , 2SB812 .

History: HMBT2222A | CJF107 | MPQ5129 | KT855A | 2SB506A | RT1N150M | FMMT459Q

Keywords - 2SB806KR transistor datasheet

 2SB806KR cross reference
 2SB806KR equivalent finder
 2SB806KR lookup
 2SB806KR substitution
 2SB806KR replacement

 

 
Back to Top

 


 
.