2SB807 Specs and Replacement
Type Designator: 2SB807
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Package: SOT89
2SB807 Substitution
- BJT ⓘ Cross-Reference Search
2SB807 datasheet
SMD Type Transistors PNP Transistors 2SB800 1.70 0.1 Features High Collector to Emitter Voltage VCEO>-80V Complement to 2SD1001 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage VEBO -5 Collector Curr... See More ⇒
Detailed specifications: 2SB805 , 2SB805KK , 2SB805KL , 2SB805KM , 2SB806 , 2SB806KP , 2SB806KQ , 2SB806KR , 2SC1815 , 2SB808 , 2SB808F , 2SB808G , 2SB81 , 2SB810 , 2SB811 , 2SB812 , 2SB812A .
History: 2N5401C
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