All Transistors. 2SB808G Datasheet

 

2SB808G Datasheet and Replacement


   Type Designator: 2SB808G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.7 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 125 MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 280
   Noise Figure, dB: -
   Package: TO92
 

 2SB808G Substitution

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2SB808G Datasheet (PDF)

 9.1. Size:211K  nec
 2sb800.pdf pdf_icon

2SB808G

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 2sb804.pdf pdf_icon

2SB808G

 9.3. Size:234K  nec
 2sb805 2sb806.pdf pdf_icon

2SB808G

 9.4. Size:1087K  kexin
 2sb800.pdf pdf_icon

2SB808G

SMD Type TransistorsPNP Transistors2SB8001.70 0.1 Features High Collector to Emitter Voltage:VCEO>-80V Complement to 2SD10010.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage VEBO -5 Collector Curr

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Keywords - 2SB808G transistor datasheet

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