2N1613A pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2N1613A Specs and Replacement

Type Designator: 2N1613A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 75 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO5

2N1613A Substitution

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2N1613A datasheet

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1613 NPN medium power transistor 1997 Apr 11 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N1613 FEATURES PINNING Low current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 emitt... See More ⇒

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS Collector Emitter Voltage (RBE... See More ⇒