All Transistors. 2SB817 Datasheet

 

2SB817 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB817
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 7.5 MHz
   Collector Capacitance (Cc): 300 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO220

 2SB817 Transistor Equivalent Substitute - Cross-Reference Search

   

2SB817 Datasheet (PDF)

 ..1. Size:199K  jmnic
2sb817.pdf

2SB817 2SB817

JMnic Product Specification Silicon PNP Power Transistors 2SB817 DESCRIPTION With TO-3PN package Complement to type 2SD1047 APPLICATIONS 140V/12A AF 60W output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS

 ..2. Size:222K  inchange semiconductor
2sb817.pdf

2SB817 2SB817

isc Silicon PNP Power Transistor 2SB817DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD1047Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommend for 60W audio frequency amplifier outputstage

 0.1. Size:30K  sanyo
2sb817p 2sd1047p 2sd1047p.pdf

2SB817 2SB817

Ordering number : ENN65722SB817P / 2SD1047P2SB817P : PNP Epitaxial Planar Silicon Transistor2SD1047P : NPN Triple Diffused Planar Silicon Transistor2SB817P / 2SD1047P140V / 12A, AF80W Output ApplicationsFeaturesPackage Dimensions Capable of being mounted easily because of one- unit : mmpoint fixing type plastic molded package (Inter-2022Achangeable with TO-3).[2SB817P

 0.2. Size:445K  sanken-ele
2sb817c 2sd1047c.pdf

2SB817 2SB817

Ordering number : ENN69872SB817C/2SD1047CPNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SB817C/2SD1047C140V / 12A, AF 80W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SB817C/2SD1047C]15.63.24.814.02.0

 0.3. Size:196K  cn sptech
2sb817d 2sb817e.pdf

2SB817 2SB817

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SB817DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD1047APPLICATIONSRecommend for 60W audio frequency amplifier outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

 0.4. Size:195K  inchange semiconductor
2sb817e.pdf

2SB817 2SB817

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB817EDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD1047EMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency

 0.5. Size:195K  inchange semiconductor
2sb817c.pdf

2SB817 2SB817

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB817CDESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Max.) @I = -5ACE(sat) CGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier outputstage a

Datasheet: 2SB813 , 2SB814 , 2SB815 , 2SB815B6 , 2SB815B7 , 2SB816 , 2SB816D , 2SB816E , 2SC2625 , 2SB817D , 2SB817E , 2SB818 , 2SB819 , 2SB82 , 2SB820 , 2SB821 , 2SB822 .

 

 
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