2N1613L Specs and Replacement
Type Designator: 2N1613L
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO5
2N1613L Substitution
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2N1613L datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1613 NPN medium power transistor 1997 Apr 11 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N1613 FEATURES PINNING Low current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 emitt... See More ⇒
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS Collector Emitter Voltage (RBE... See More ⇒
Detailed specifications: 2N161, 2N1610, 2N1611, 2N1612, 2N1613, 2N1613-46, 2N1613A, 2N1613B, B647, 2N1613S, 2N1614, 2N1615, 2N1616, 2N1616-1, 2N1616A, 2N1617, 2N1617-1
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