All Transistors. 2N1613S Datasheet

 

2N1613S Datasheet and Replacement


   Type Designator: 2N1613S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 75 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO5
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2N1613S Datasheet (PDF)

 8.1. Size:665K  rca
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2N1613S

 8.2. Size:51K  philips
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2N1613S

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N1613NPN medium power transistor1997 Apr 11Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistor 2N1613FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 emitt

 8.3. Size:64K  central
 2n1613 2n1711 2n1893.pdf pdf_icon

2N1613S

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 8.4. Size:224K  cdil
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2N1613S

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613TO-39Metal Can PackageABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSCollector Emitter Voltage (RBE

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Datasheet: 2N1610 , 2N1611 , 2N1612 , 2N1613 , 2N1613-46 , 2N1613A , 2N1613B , 2N1613L , BF422 , 2N1614 , 2N1615 , 2N1616 , 2N1616-1 , 2N1616A , 2N1617 , 2N1617-1 , 2N1617A .

History: 2S116 | 2S176 | 2S104 | 2N6131 | 2N6106 | 2N5894 | BC847AWT1

Keywords - 2N1613S transistor datasheet

 2N1613S cross reference
 2N1613S equivalent finder
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