2N1613S Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N1613S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO5
2N1613S Transistor Equivalent Substitute - Cross-Reference Search
2N1613S Datasheet (PDF)
2n1613.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N1613NPN medium power transistor1997 Apr 11Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistor 2N1613FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 emitt
2n1613 2n1711 2n1893.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n1613.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613TO-39Metal Can PackageABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSCollector Emitter Voltage (RBE
Datasheet: 2N1610 , 2N1611 , 2N1612 , 2N1613 , 2N1613-46 , 2N1613A , 2N1613B , 2N1613L , KT805AM , 2N1614 , 2N1615 , 2N1616 , 2N1616-1 , 2N1616A , 2N1617 , 2N1617-1 , 2N1617A .
