2N1614 Specs and Replacement
Type Designator: 2N1614
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.24 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 0.5 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 18
Package: R32
2N1614 Substitution
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2N1614 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1613 NPN medium power transistor 1997 Apr 11 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N1613 FEATURES PINNING Low current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 emitt... See More ⇒
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
2N1616 MECHANICAL DATA Dimensions in mm (inches) NPN SILICON TRANSISTOR ! Bipolar Power Transistor TO 61 Hermetic Package High Current Switching LF Large Signal Amplification TO 61 Metal Package. Pin 1 Emitter Pin 2 Base Case Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C unless... See More ⇒
Detailed specifications: 2N1611, 2N1612, 2N1613, 2N1613-46, 2N1613A, 2N1613B, 2N1613L, 2N1613S, D667, 2N1615, 2N1616, 2N1616-1, 2N1616A, 2N1617, 2N1617-1, 2N1617A, 2N1618
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