All Transistors. 2SB841L Datasheet

 

2SB841L Datasheet and Replacement


   Type Designator: 2SB841L
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 70 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO126
 

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2SB841L Datasheet (PDF)

 9.1. Size:152K  jmnic
 2sb849.pdf pdf_icon

2SB841L

JMnic Product Specification Silicon PNP Power Transistors 2SB849 DESCRIPTION With TO-3PFa package Complement to type 2SD1110 Wide area of safe operation APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collec

 9.2. Size:105K  inchange semiconductor
 2sb849a.pdf pdf_icon

2SB841L

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB849A DESCRIPTION With TO-3PFa package Complement to type 2SD1110A Wide area of safe operation APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALU

 9.3. Size:192K  inchange semiconductor
 2sb848.pdf pdf_icon

2SB841L

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB848DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETE

 9.4. Size:122K  inchange semiconductor
 2sb849.pdf pdf_icon

2SB841L

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB849 DESCRIPTION With TO-3PFa package Complement to type 2SD1110 Wide area of safe operation APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

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Datasheet: 2SB838 , 2SB838L , 2SB839 , 2SB839L , 2SB84 , 2SB840 , 2SB840L , 2SB841 , D882 , 2SB842 , 2SB842L , 2SB843 , 2SB844 , 2SB845 , 2SB846 , 2SB848 , 2SB849 .

History: 9018D | L2SC4083NWT1G | 3DD4241R | 2SD2212 | KU602 | TIS87 | BC383B

Keywords - 2SB841L transistor datasheet

 2SB841L cross reference
 2SB841L equivalent finder
 2SB841L lookup
 2SB841L substitution
 2SB841L replacement

 

 
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