2SB857D Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB857D
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 7.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: TO220
2SB857D Transistor Equivalent Substitute - Cross-Reference Search
2SB857D Datasheet (PDF)
2sb857.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR DESCRIPTION Low frequency power amplifier. ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB857L-x-T60-K 2SB857G-x-T60-K TO-126 E C B Bulk2SB857L-x-T6C-K 2SB857G-x-T6C-K TO-126C E C B Bulk2SB857L-x-TA3-T 2SB857G-x-TA3-T TO-220 B C E Tu
2sb857 2sb858.pdf
To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sb857 2sb858.pdf
2SB857, 2SB858Silicon PNP Triple DiffusedApplicationLow frequency power amplifier complementary pair with 2SD1133 and 2SD1134OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SB857 2SB858 UnitCollector to base voltage VCBO 70 70 VCollector to emitter voltage VCEO 50 60 VEmitter to base
2sb857 2sb858.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB857 2SB858 DESCRIPTION With TO-220C package Complement to type 2SD1133/1134 APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltag
hsb857 2sb857.pdf
Spec. No. : HE6705HI-SINCERITYIssued Date : 1995.01.27Revised Date : 2005.10.07MICROELECTRONICS CORP.Page No. : 1/4HSB857 / 2SB857PNP EPITAXIAL PLANAR TRANSISTORDescriptionLow frequency power amplifier.TO-220Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ....................................................................................
2sb857 2sb858.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB857 2SB858 DESCRIPTION With TO-220C package Complement to type 2SD1133/1134 APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Coll
2sb857.pdf
isc Silicon PNP Power Transistor 2SB857DESCRIPTIONCollector Current: I = -4ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -2ACE(sat) CHigh Collector Power DissipationComplement to Type 2SD1133Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE M
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
