2SB859B Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB859B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO220
2SB859B Transistor Equivalent Substitute - Cross-Reference Search
2SB859B Datasheet (PDF)
2sb859.pdf
2SB859Silicon PNP Triple DiffusedApplicationLow frequency power amplifier complementary pair with 2SD1135OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 100 VCollector to emitter voltage VCEO 80 VEmitter to base voltage VEBO 5 VCollector current IC 4
2sb859.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB859 DESCRIPTION With TO-220C package Complement to type 2SD1135 APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitt
2sb859.pdf
isc Silicon PNP Power Transistor 2SB859DESCRIPTIONCollector Current: I = -4ACLow Collector Saturation Voltage: V = -2.0V(Max)@I = -2ACE(sat) CHigh Collector Power DissipationComplement to Type 2SD1135Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE M
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
