2SB891 Datasheet. Specs and Replacement

Type Designator: 2SB891  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 5 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO126

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2SB891 datasheet

 ..1. Size:213K  inchange semiconductor

2sb891.pdf pdf_icon

2SB891

isc Silicon PNP Power Transistor 2SB891 DESCRIPTION High Collector Current -I = -2A C Good Linearity of h FE Low Collector Saturation Voltage Complement to Type 2SD1189 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stage of audio amplifier, voltage regulator,DC-DC converter and relay driver. AB... See More ⇒

 0.1. Size:99K  inchange semiconductor

2sb891f.pdf pdf_icon

2SB891

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB891F DESCRIPTION With TO-126 package Complement to type 2SD1189F Low collector saturation voltage APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL ... See More ⇒

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2SB891

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2SB891

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Detailed specifications: 2SB884, 2SB885, 2SB886, 2SB887, 2SB888, 2SB889, 2SB89, 2SB890, 2SD998, 2SB892, 2SB892R, 2SB892S, 2SB892T, 2SB892U, 2SB893, 2SB893D, 2SB893E

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