All Transistors. 2SB896 Datasheet

 

2SB896 Datasheet and Replacement


   Type Designator: 2SB896
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 35 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 75 MHz
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: TO220
 

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2SB896 Datasheet (PDF)

 ..1. Size:188K  inchange semiconductor
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2SB896

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB896DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -40V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -0.6(Max.) @I = -7ACE(sat) CHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage s

 0.1. Size:93K  inchange semiconductor
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2SB896

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB896 2SB896A DESCRIPTION With TO-220C package Low collector saturation voltage High speed switching APPLICATIONS For low voltage switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAME

 9.1. Size:86K  1
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2SB896

 9.2. Size:81K  1
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2SB896

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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