2SB902 Datasheet and Replacement

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB908 Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain: hFE (1) = 2000 (min) (V = -2 V, I = -1 A) CE C Low saturation voltage: V = -1.5 V (max) (I = -3 A) CE (sat) C Complementary to 2SD1223. Maximum Ratings (Ta = 25

2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB907 Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain: hFE (1) = 2000 (min) (V = -2 V, I = -1 A) CE C Low saturation voltage: V = -1.5 V (max) (I = -2 A) CE (sat) C Complementary to 2SD1222. Maximum Ratings (Ta = 25

2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB905 Power Amplifier Applications Unit: mm Complementary to SD1220 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -150 VCollector-emitter voltage VCEO -150 VEmitter-base voltage VEBO -6 VCollector current IC -1.5 ABase current IB -1.0 ATa = 25C 1.0

2SB906 TOSHIBA Transistor Silicon PNP Diffused Type (PCT process) 2SB906 Audio Frequency Power Amplifier Application Unit: mm Low collector saturation voltage : V = -1.0 V (typ.) (I = -3 A, I = -0.3 A) CE (sat) C B High power dissipation: P = 20 W (Tc = 25C) C Complementary to 2SD1221 (B) 2SB906 (LB) M

JMnic Product Specification Silicon PNP Power Transistors 2SB903 DESCRIPTION With TO-220 package Low collector saturation voltage Large current capacity. Complement to type 2SD1212 APPLICATIONS Suitable for relay drivers, high-speed inverters,converters, and other genral large current switching applications. High-speed switching applications PINNING PIN DES

SMD Type TransistorsPNP Transistors2SB906TO-252 Unit: mm6.50+0.15-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector saturation voltage High power dissipation: PC = 20 W (Tc = 25C) 0.1270.80+0.1 max-0.1 Complementary to 2SD12212.3 0.60+ 0.1 1 Base- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB901DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -60V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -2ACE(sat) CWide area of safe operationGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for powe

isc Silicon PNP Power Transistor 2SB903DESCRIPTIONHigh Collector Current: I = -12ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -5ACE(sat) CComplement to Type 2SD1212Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and other general large-current swi

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB904DESCRIPTIONHigh Collector Current:I = -20ACLow Collector Saturation Voltage: V =- 0.5V(Max)@I = 8ACE(sat) CComplement to Type 2SD1213Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for large current switching of relay drivers,high-speed inverters

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB900DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -50V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -2ACE(sat) CWide area of safe operationGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for powe