2SB912 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB912
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 5000
Noise Figure, dB: -
Package: TO218
2SB912 Transistor Equivalent Substitute - Cross-Reference Search
2SB912 Datasheet (PDF)
2sb1188 2sb1188 2sb1182 2sb1240 2sb822 2sb1277 2sb911m.pdf
TransistorsMedium power Transistor(*32V,*2A)2SB1188 / 2SB1182 / 2SB1240 /2SB822 / 2SB1277 / 2SB911MFFeatures FExternal dimensions (Unit: mm)1) Low VCE(sat).VCE(sat) = *0.5V (Typ.)(IC / IB = *2A / *0.2A)2) Complements the 2SD1766 /2SD1758 / 2SD1862 / 2SD1189F /2SD1055 / 2SD1919 / SD1227M.FStructureEpitaxial planar typePNP silicon transistor(96-131-B24)2152SB1188
2sb910m 2sb1238.pdf
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2sb919.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB919 DESCRIPTION With TO-220C package Complement to type 2SD1235 Low collector saturation voltage Large current capacity APPLICATIONS Large current switching of relay drivers, high-speed inverters,converters PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplif
2sb919.pdf
isc Silicon PNP Power Transistor 2SB919DESCRIPTIONHigh Collector Current: I = -8ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -3ACE(sat) CComplement to Type 2SD1235Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for large current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
