2SB918 Datasheet. Specs and Replacement
Type Designator: 2SB918 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO92
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2SB918 datasheet
2sb1188 2sb1188 2sb1182 2sb1240 2sb822 2sb1277 2sb911m.pdf ![]()
Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures FExternal dimensions (Unit mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 2SB1188 ... See More ⇒
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB919 DESCRIPTION With TO-220C package Complement to type 2SD1235 Low collector saturation voltage Large current capacity APPLICATIONS Large current switching of relay drivers, high-speed inverters,converters PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplif... See More ⇒
isc Silicon PNP Power Transistor 2SB919 DESCRIPTION High Collector Current I = -8A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -3A CE(sat) C Complement to Type 2SD1235 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for large current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
Detailed specifications: 2SC2636S, 2SB911M, 2SB912, 2SB913, 2SB914, 2SB915, 2SB916, 2SB917, B772, 2SB919, 2SB919Q, 2SB919R, 2SB919S, 2SB92, 2SB920, 2SB920L, 2SB920LQ
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