All Transistors. 2SB919S Datasheet

 

2SB919S Datasheet and Replacement


   Type Designator: 2SB919S
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 60 MHz
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: TO220
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2SB919S Datasheet (PDF)

 8.1. Size:224K  jmnic
 2sb919.pdf pdf_icon

2SB919S

JMnic Product Specification Silicon PNP Power Transistors 2SB919 DESCRIPTION With TO-220C package Complement to type 2SD1235 Low collector saturation voltage Large current capacity APPLICATIONS Large current switching of relay drivers, high-speed inverters,converters PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplif

 8.2. Size:217K  inchange semiconductor
 2sb919.pdf pdf_icon

2SB919S

isc Silicon PNP Power Transistor 2SB919DESCRIPTIONHigh Collector Current: I = -8ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -3ACE(sat) CComplement to Type 2SD1235Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for large current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

 9.1. Size:130K  rohm
 2sb1188 2sb1188 2sb1182 2sb1240 2sb822 2sb1277 2sb911m.pdf pdf_icon

2SB919S

TransistorsMedium power Transistor(*32V,*2A)2SB1188 / 2SB1182 / 2SB1240 /2SB822 / 2SB1277 / 2SB911MFFeatures FExternal dimensions (Unit: mm)1) Low VCE(sat).VCE(sat) = *0.5V (Typ.)(IC / IB = *2A / *0.2A)2) Complements the 2SD1766 /2SD1758 / 2SD1862 / 2SD1189F /2SD1055 / 2SD1919 / SD1227M.FStructureEpitaxial planar typePNP silicon transistor(96-131-B24)2152SB1188

 9.2. Size:111K  rohm
 2sb910m 2sb1238.pdf pdf_icon

2SB919S

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Keywords - 2SB919S transistor datasheet

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