2SB93 Datasheet and Replacement

Power Transistors 2SB933 Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For power switching 6.0 0.5 1.0 0.1 Complementary to 2SD1256 Features 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE 0.8 0.1 0.5max. Large collector current IC 2.54 0.3 N type package enabling direct sold... See More ⇒

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Power Transistors 2SB931 Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For power switching 6.0 0.5 1.0 0.1 Complementary to 2SD1254 Features 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE 0.8 0.1 0.5max. Large collector current IC 2.54 0.3 N type package enabling direct sold... See More ⇒

Power Transistors 2SB932 Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For power switching 6.0 0.5 1.0 0.1 Complementary to 2SD1255 Features 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE 0.8 0.1 0.5max. Large collector current IC 2.54 0.3 N type package enabling direct sold... See More ⇒

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Power Transistors 2SB0936 (2SB936), 2SB0936A (2SB936A) Silicon PNP epitaxial planar type For low-voltage switching Unit mm Features 8.5 0.2 3.4 0.3 6.0 0.2 1.0 0.1 Low collector-emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 0 ... See More ⇒

Power Transistors 2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington Unit mm For midium-speed power switching 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 Complementary to 2SD1262 and 2SD1262A Features High foward current transfer ratio hFE 1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circu... See More ⇒

Power Transistors 2SB935, 2SB935A Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 For low-voltage switching Features Low collector to emitter saturation voltage VCE(sat) 1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circuit board, etc. of small electronic equipmen... See More ⇒

Power Transistors 2SB930, 2SB930A Silicon PNP epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 For power amplification Complementary to 2SD1253 and 2SD1253A Features 1.5max. 1.1max. High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 0.8 0.1 0.5max. N type package enabling direct solder... See More ⇒

SMD Type Transistors PNP Transistors 2SB933 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 0.127 +0.1 Complementary to 2SD1256 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.1... See More ⇒

SMD Type Transistors PNP Transistors 2SB930A TO-252 Unit mm Features +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 High forward current transfer ratio hFE 0.50 -0.7 which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Complementary to 2SD1253A 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 ... See More ⇒

SMD Type Transistors PNP Transistors 2SB931 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 0.127 +0.1 Complementary to 2SD1254 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 ... See More ⇒

SMD Type Transistors PNP Transistors 2SB932 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 0.127 +0.1 Complementary to 2SD1255 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.1... See More ⇒

SMD Type Transistors PNP Transistors 2SB936A TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector to emitter saturation voltage VCE(sat) High-speed switching 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rati... See More ⇒

SMD Type Transistors PNP Transistors 2SB934 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 0.127 +0.1 Complementary to 2SD1257 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.1... See More ⇒

SMD Type Transistors PNP Transistors 2SB936 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector to emitter saturation voltage VCE(sat) High-speed switching 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratin... See More ⇒

SMD Type Transistors PNP Transistors 2SB935A TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector to emitter saturation voltage VCE(sat) High-speed switching 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratin... See More ⇒

SMD Type Transistors PNP Transistors 2SB935 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector to emitter saturation voltage VCE(sat) High-speed switching 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating... See More ⇒

SMD Type Transistors PNP Transistors 2SB930 TO-252 Unit mm Features +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 High forward current transfer ratio hFE 0.50 -0.7 which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Complementary to 2SD1253 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Co... See More ⇒