2SB941A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB941A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220
2SB941A Transistor Equivalent Substitute - Cross-Reference Search
2SB941A Datasheet (PDF)
2sb941 2sb941a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB941 2SB941A DESCRIPTION With TO-220Fa package Low collector saturation voltage Complementary to type 2SD1266/1266A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings(Ta=25) S
2sb941.pdf
Power Transistors2SB941, 2SB941ASilicon PNP epitaxial planar typeFor low-frequency power amplificationComplementary to 2SD1266 and 2SD1266AUnit: mmFeatures10.0 0.2 4.2 0.2High forward current transfer ratio hFE which has satisfactory linearity5.5 0.2 2.7 0.2Low collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat sink
2sb941 3ca941.pdf
2SB941(3CA941) PNP /SILICON PNP TRANSISTOR :./Purpose: For low-frequency power amplification.: HFE - TO-220 /Feature: High forward current transfer ratio Hfe which has satisfactory linearity,low collector to emi
2sb941-a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB941 2SB941A DESCRIPTION With TO-220Fa package Low collector saturation voltage Complementary to type 2SD1266/1266A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum rati
2sb941.pdf
isc Silicon PNP Power Transistor 2SB941DESCRIPTIONLow Collector Saturation Voltage-: V = -1.2V(Max)@I = -3ACE(sat) CGood Linearity of hFEComplement to Type 2SD1266Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
