2SB949 PDF and Equivalents Search

 

2SB949 Specs and Replacement

Type Designator: 2SB949

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 35 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: TO220

 2SB949 Substitution

- BJT ⓘ Cross-Reference Search

 

2SB949 datasheet

 ..1. Size:63K  panasonic

2sb949.pdf pdf_icon

2SB949

Power Transistors 2SB949, 2SB949A Silicon PNP epitaxial planar type Darlington For power amplification and switching Unit mm 10.0 0.2 4.2 0.2 Complementary to 2SD1275 and 2SD1275A 5.5 0.2 2.7 0.2 Features High foward current transfer ratio hFE 3.1 0.1 High-speed switching Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 ... See More ⇒

 9.1. Size:47K  panasonic

2sb942.pdf pdf_icon

2SB949

Power Transistors 2SB942, 2SB942A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267 and 2SD1267A Unit mm Features 10.0 0.2 4.2 0.2 High forward current transfer ratio hFE which has satisfactory linearity 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink... See More ⇒

 9.2. Size:55K  panasonic

2sb944.pdf pdf_icon

2SB949

Power Transistors 2SB944 Silicon PNP epitaxial planar type For power switching Unit mm Complementary to 2SD1269 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one ... See More ⇒

 9.3. Size:55K  panasonic

2sb945.pdf pdf_icon

2SB949

Power Transistors 2SB945 Silicon PNP epitaxial planar type For power switching Unit mm Complementary to 2SD1270 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one ... See More ⇒

Detailed specifications: 2SB943, 2SB944, 2SB945, 2SB946, 2SB947, 2SB947A, 2SB948, 2SB948A, BC337, 2SB949A, 2SB95, 2SB950, 2SB950A, 2SB951, 2SB951A, 2SB952, 2SB952A

Keywords - 2SB949 pdf specs

 2SB949 cross reference

 2SB949 equivalent finder

 2SB949 pdf lookup

 2SB949 substitution

 2SB949 replacement

 

 

 


🌐 : EN  ES  РУ

social

LIST

Last Update

BJT: GA1A4M | SBT42 | 2SA200-Y

 

 

 

Popular searches

ksa1381 equivalent | 2sa1306 | b817 transistor | 2n3394 | 2sb688 | 2sd551 | ac128 datasheet | 2n5496

 

 

↑ Back to Top
.