Справочник транзисторов. 2SB949

 

Биполярный транзистор 2SB949 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SB949
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 35 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 175 °C
   Статический коэффициент передачи тока (hfe): 2000
   Корпус транзистора: TO220

 Аналоги (замена) для 2SB949

 

 

2SB949 Datasheet (PDF)

 ..1. Size:63K  panasonic
2sb949.pdf

2SB949
2SB949

Power Transistors2SB949, 2SB949ASilicon PNP epitaxial planar type DarlingtonFor power amplification and switchingUnit: mm10.0 0.2 4.2 0.2Complementary to 2SD1275 and 2SD1275A5.5 0.2 2.7 0.2Features High foward current transfer ratio hFE 3.1 0.1 High-speed switching Full-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1

 9.1. Size:47K  panasonic
2sb942.pdf

2SB949
2SB949

Power Transistors2SB942, 2SB942ASilicon PNP epitaxial planar typeFor low-frequency power amplificationComplementary to 2SD1267 and 2SD1267AUnit: mmFeatures10.0 0.2 4.2 0.2High forward current transfer ratio hFE which has satisfactory linearity5.5 0.2 2.7 0.2Low collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat sink

 9.2. Size:55K  panasonic
2sb944.pdf

2SB949
2SB949

Power Transistors2SB944Silicon PNP epitaxial planar typeFor power switchingUnit: mmComplementary to 2SD126910.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package which can be installed to the heat sink withone

 9.3. Size:55K  panasonic
2sb945.pdf

2SB949
2SB949

Power Transistors2SB945Silicon PNP epitaxial planar typeFor power switchingUnit: mmComplementary to 2SD127010.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package which can be installed to the heat sink withone

 9.4. Size:96K  panasonic
2sb947.pdf

2SB949
2SB949

Power Transistors2SB0947 (2SB947), 2SB0947A (2SB947A)Silicon PNP epitaxial planar typeFor low-voltage switcingUnit: mm Features10.00.2 4.20.25.50.2 2.70.2 Low collector-emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw 3.10.1 Absolute Maximum Ratings TC = 25CPar

 9.5. Size:55K  panasonic
2sb943.pdf

2SB949
2SB949

Power Transistors2SB943Silicon PNP epitaxial planar typeFor power switchingUnit: mmComplementary to 2SD126810.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package which can be installed to the heat sink withone

 9.6. Size:56K  panasonic
2sb948.pdf

2SB949
2SB949

Power Transistors2SB948, 2SB948ASilicon PNP epitaxial planar typeFor low-voltage switchingUnit: mmComplementary to 2SD1445 and 2SD1445A10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2Low collector to emitter saturation voltage VCE(sat)High-speed switching 3.1 0.1Full-pack package which can be installed to the heat sink withone screwAbsolute Maximum Ratings (TC=25

 9.7. Size:55K  panasonic
2sb946.pdf

2SB949
2SB949

Power Transistors2SB946Silicon PNP epitaxial planar typeFor power switchingUnit: mmComplementary to 2SD127110.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Satisfactory linearity of foward current transfer ratio hFELarge collector current IC0Full-pack package which can be installed to the heat sink withone

 9.8. Size:47K  panasonic
2sb941.pdf

2SB949
2SB949

Power Transistors2SB941, 2SB941ASilicon PNP epitaxial planar typeFor low-frequency power amplificationComplementary to 2SD1266 and 2SD1266AUnit: mmFeatures10.0 0.2 4.2 0.2High forward current transfer ratio hFE which has satisfactory linearity5.5 0.2 2.7 0.2Low collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat sink

 9.9. Size:46K  panasonic
2sb940.pdf

2SB949
2SB949

Power Transistors2SB940, 2B940ASilicon PNP epitaxial planar typeFor power amplificationUnit: mmFor TV vertical deflection output10.0 0.2 4.2 0.2Complementary to 2SD1264 and 2SD1264A5.5 0.2 2.7 0.2FeaturesHigh collector to emitter voltage VCEO 3.1 0.1Large collector power dissipation PCFull-pack package which can be installed to the heat sink withone screw

 9.10. Size:159K  jmnic
2sb944.pdf

2SB949
2SB949

JMnic Product Specification Silicon PNP Power Transistors 2SB944 DESCRIPTION With TO-220Fa package Large collector current IC Low collector saturation voltage Complement to type 2SD1269 APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 EmitterAbsolute maximum ratings(Ta=

 9.11. Size:191K  jmnic
2sb941 2sb941a.pdf

2SB949
2SB949

JMnic Product Specification Silicon PNP Power Transistors 2SB941 2SB941A DESCRIPTION With TO-220Fa package Low collector saturation voltage Complementary to type 2SD1266/1266A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings(Ta=25) S

 9.12. Size:187K  jmnic
2sb945.pdf

2SB949
2SB949

JMnic Product Specification Silicon PNP Power Transistors 2SB945 DESCRIPTION With TO-220Fa package Large collector current IC Low collector saturation voltage Complement to type 2SD1270 APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings(Ta=2

 9.13. Size:229K  jmnic
2sb947 2sb947a.pdf

2SB949
2SB949

JMnic Product Specification Silicon PNP Power Transistors 2SB947 2SB947A DESCRIPTION With TO-220Fa package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SB947 -40 VCBO Col

 9.14. Size:194K  jmnic
2sb940 2sb940a.pdf

2SB949
2SB949

JMnic Product Specification Silicon PNP Power Transistors 2SB940,2SB940A DESCRIPTION With TO-220Fa package Complement to type 2SD1264/1264A High collector to emitter voltage VCEO Large collector power dissipation PC APPLICATIONS For power amplification For TV vertical deflection output PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum

 9.15. Size:192K  jmnic
2sb942 2sb942a.pdf

2SB949
2SB949

JMnic Product Specification Silicon PNP Power Transistors 2SB942 2SB942A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SD1267/1267A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outl

 9.16. Size:159K  jmnic
2sb943.pdf

2SB949
2SB949

JMnic Product Specification Silicon PNP Power Transistors 2SB943 DESCRIPTION With TO-220Fa package Large collector current IC Low collector saturation voltage Complement to type 2SD1268 APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 EmitterAbsolute maximum ratings(Ta=

 9.17. Size:209K  jmnic
2sb948 s2b948a.pdf

2SB949
2SB949

JMnic Product Specification Silicon PNP Power Transistors 2SB948 2SB948A DESCRIPTION With TO-220Fa package Complement to type 2SD1445/1445A High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITI

 9.18. Size:189K  jmnic
2sb946.pdf

2SB949
2SB949

JMnic Product Specification Silicon PNP Power Transistors 2SB946 DESCRIPTION With TO-220Fa package Complement to type 2SD1271 Low saturation voltage Good linearity of hFE High current APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UN

 9.19. Size:555K  semtech
st2sb9435u.pdf

2SB949
2SB949

ST 2SB9435U PNP Silicon Epitaxial Power Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 45 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 6 VCollector Current -IC 3 APeak Collector Current -ICM 5 ABase Current -IB 1 A1)Total Power Dissipation at Ta = 25 Ptot 0.72 WTotal Power Dissipation at Tc =

 9.20. Size:181K  lzg
2sb941 3ca941.pdf

2SB949
2SB949

2SB941(3CA941) PNP /SILICON PNP TRANSISTOR :./Purpose: For low-frequency power amplification.: HFE - TO-220 /Feature: High forward current transfer ratio Hfe which has satisfactory linearity,low collector to emi

 9.21. Size:218K  inchange semiconductor
2sb942.pdf

2SB949
2SB949

isc Silicon PNP Power Transistor 2SB942DESCRIPTIONLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -4ACE(sat) CGood Linearity of hFEComplement to Type 2SD1267Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 9.22. Size:218K  inchange semiconductor
2sb944.pdf

2SB949
2SB949

isc Silicon PNP Power Transistor 2SB944DESCRIPTIONLow Collector Saturation Voltage: V = -0.5V(Max)@ I = -3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -80V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD1269Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUT

 9.23. Size:218K  inchange semiconductor
2sb946a.pdf

2SB949
2SB949

isc Silicon PNP Power Transistor 2SB946ADESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -5ACE(sat) CGood Linearity of hFELarge Collector Current ICComplement to Type 2SD1271AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 9.24. Size:217K  inchange semiconductor
2sb945.pdf

2SB949
2SB949

isc Silicon PNP Power Transistor 2SB945DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -4ACE(sat) CGood Linearity of hFELarge Collector Current ICComplement to Type 2SD1270Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 9.25. Size:156K  inchange semiconductor
2sb940 2sb940a.pdf

2SB949
2SB949

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB940,2SB940A DESCRIPTION With TO-220Fa package Complement to type 2SD1264/1264A High collector to emitter voltage VCEO Large collector power dissipation PC APPLICATIONS For power amplification For TV vertical deflection output PINNING PIN DESCRIPTION1 Emitter 2 Collector3 Base

 9.26. Size:151K  inchange semiconductor
2sb942 2sb942a.pdf

2SB949
2SB949

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB942 2SB942A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SD1267/1267A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.

 9.27. Size:217K  inchange semiconductor
2sb947.pdf

2SB949
2SB949

isc Silicon PNP Power Transistor 2SB947DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max)@I = -7ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

 9.28. Size:156K  inchange semiconductor
2sb940-a.pdf

2SB949
2SB949

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB940,2SB940A DESCRIPTION With TO-220Fa package Complement to type 2SD1264/1264A High collector to emitter voltage VCEO Large collector power dissipation PC APPLICATIONS For power amplification For TV vertical deflection output PINNING PIN DESCRIPTION1 Emitter 2 Collector3 Base

 9.29. Size:218K  inchange semiconductor
2sb943.pdf

2SB949
2SB949

isc Silicon PNP Power Transistor 2SB943DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -2ACE(sat) CGood Linearity of hFEComplement to Type 2SD1268Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

 9.30. Size:218K  inchange semiconductor
2sb948.pdf

2SB949
2SB949

isc Silicon PNP Power Transistor 2SB948DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max)@I = -10ACE(sat) CHigh Speed SwitchingComplement to Type 2SD1445Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 9.31. Size:150K  inchange semiconductor
2sb941-a.pdf

2SB949
2SB949

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB941 2SB941A DESCRIPTION With TO-220Fa package Low collector saturation voltage Complementary to type 2SD1266/1266A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum rati

 9.32. Size:217K  inchange semiconductor
2sb946.pdf

2SB949
2SB949

isc Silicon PNP Power Transistor 2SB946DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -5ACE(sat) CGood Linearity of hFELarge Collector Current ICComplement to Type 2SD1271Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 9.33. Size:218K  inchange semiconductor
2sb941.pdf

2SB949
2SB949

isc Silicon PNP Power Transistor 2SB941DESCRIPTIONLow Collector Saturation Voltage-: V = -1.2V(Max)@I = -3ACE(sat) CGood Linearity of hFEComplement to Type 2SD1266Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 9.34. Size:151K  inchange semiconductor
2sb942-a.pdf

2SB949
2SB949

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB942 2SB942A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SD1267/1267A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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