2SB960 Datasheet and Replacement

   Type Designator: 2SB960
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO218

2SB960 Substitution

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2SB960 Datasheet (PDF)

9.1. Size:233K nec
2sb962.pdf pdf_icon

9.2. Size:219K nec
2sb963.pdf pdf_icon

9.3. Size:664K nec
2sb963-z.pdf pdf_icon

DATA SHEETSILICON POWER TRANSISTOR2SB963-ZPNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SB963-Z is designed for switching, especially in Hybrid 6.5 0.2Integrated Circuits. 5.0 0.22.3 0.20.5 0.14.4 0.2NoteNoteFEATURES 4 High Gain hFE = 2000 to 3000 Complement to 2SD1286-Z 1 2 3

9.4. Size:43K panasonic
2sb967.pdf pdf_icon

Power Transistors2SB967Silicon PNP epitaxial planar typeUnit: mm6.5 0.12.3 0.15.3 0.1For low-frequency power amplification4.35 0.10.5 0.1Features1.0 0.10.1 0.050.93 0.1Possible to solder the radiation fin directly to printed cicuit board0.5 0.10.75 0.1Low collector to emitter saturation voltage VCE(sat)2.3 0.1 4.6 0.1Large collecto

9.5. Size:53K panasonic
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Power Transistors2SB968Silicon PNP epitaxial planar typeUnit: mm6.5 0.12.3 0.15.3 0.1For low-frequency output amplification4.35 0.10.5 0.1Complementary to 2SD1295Features1.0 0.10.1 0.050.93 0.1Possible to solder the radiation fin directly to printed cicuit board0.5 0.10.75 0.1High collector to emitter VCEO2.3 0.1 4.6 0.1Large col

9.6. Size:29K no
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9.7. Size:153K jmnic
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JMnic Product Specification Silicon PNP Power Transistors 2SB966 DESCRIPTION With TO-3PFa package Complement to type 2SD1289 APPLICATIONS For use in low frequency and power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitte

9.8. Size:903K kexin
2sb962-z.pdf pdf_icon

SMD Type TransistorsPNP Transistors2SB962-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector to emitter saturation voltage VCE(sat).0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base

9.9. Size:960K kexin
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SMD Type TransistorsPNP Transistors2SB967TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.2 Features 5.30-0.2 +0.80.50 -0.7 Large collector current Ic Low collector to emitter saturation voltage VCE(sat).0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol

9.10. Size:1121K kexin
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SMD Type TransistorsPNP Transistors2SB968TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High collector to emitter VCEO Large collector power dissipation PC Complementary to 2SD12950.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25

9.11. Size:191K inchange semiconductor
2sb962-z.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB962-ZDESCRIPTIONLow Collector Saturation Voltage: V = -0.3V(Typ)@I = -2.0ACE(sat) CPNP silicon epitaxial transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SB962-Z is designed for Audio frequency amplifierand switching ,especia

9.12. Size:205K inchange semiconductor
2sb965.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB965DESCRIPTIONLow Collector Saturation Voltage: V = -0.55V(Typ)@I = -4.0ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOComplement to Type 2SD1288100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency po

9.13. Size:205K inchange semiconductor
2sb966.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB966DESCRIPTIONLow Collector Saturation Voltage: V = -0.65V(Typ)@I = -5.0ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOComplement to Type 2SD1289100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency po

9.14. Size:192K inchange semiconductor
2sb963.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB963DESCRIPTIONWith TO-251(IPAK) packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to type 2SD1286Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlEl

9.15. Size:217K inchange semiconductor
2sb963-z.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB963-ZDESCRIPTIONWith TO-252(DPAK) packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to type 2SD1286-ZMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor control

Datasheet: 2SB954A , 2SB955 , 2SB955K , 2SB956 , 2SB957 , 2SB958 , 2SB959 , 2SB96 , 2SC4793 , 2SB962 , 2SB963 , 2SB964 , 2SB965 , 2SB966 , 2SB967 , 2SB968 , 2SB969 .