2SB995 Datasheet. Specs and Replacement

Type Designator: 2SB995

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: TO126

 2SB995 Substitution

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2SB995 datasheet

 ..1. Size:218K  inchange semiconductor

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2SB995

isc Silicon PNP Power Transistor 2SB995 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Low Collector Saturation Voltage- V = -2.0V(Max)@ I = -4A CE(sat) C Complement to Type 2SD1355 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Recommended for 30W high-fidelity a... See More ⇒

 9.1. Size:216K  inchange semiconductor

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2SB995

isc Silicon PNP Power Transistor 2SB996 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD1356 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Recommended for 20 25W high-fidelity audio frequency amplifier output stage. ABSOL... See More ⇒

 9.2. Size:216K  inchange semiconductor

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2SB995

isc Silicon PNP Power Transistor 2SB992 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Collector Power Dissipation- P = 40W@ T = 25 C C Low Collector Saturation Voltage- V = -0.5V(Max)@ I = -4A CE(sat) C Complement to Type 2SD1362 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High curre... See More ⇒

 9.3. Size:216K  inchange semiconductor

 2sb993.pdf pdf_icon

2SB995

isc Silicon PNP Power Transistor 2SB993 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Collector Power Dissipation- P = 40W@ T = 25 C C Low Collector Saturation Voltage- V = -0.4V(Max)@ I = -4A CE(sat) C Complement to Type 2SD1363 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High curre... See More ⇒

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Detailed specifications: 2SB987, 2SB988, 2SB989, 2SB99, 2SB991, 2SB992, 2SB993, 2SB994, BC639, 2SB996, 2SB997, 2SB998, 2SB999, 2SC100, 2SC1000, 2SC1000GTM, 2SC1001

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