2SC103 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC103
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO18
2SC103 Transistor Equivalent Substitute - Cross-Reference Search
2SC103 Datasheet (PDF)
2sc1030.pdf
Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IC Collector current-Continuous 6 A PD Total Power Dissipation@TC
2sc1034.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1034DESCRIPTIONDC Current Gain -h = 4(Min)@ I = 0.75AFE CCollector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in general purpose power amplifier andswitching applicationsABSOLUTE MAXIMUM
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , B772 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
