2SC1032 Datasheet. Specs and Replacement
Type Designator: 2SC1032
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 3.6 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO92
2SC1032 Substitution
- BJT ⓘ Cross-Reference Search
2SC1032 datasheet
Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IC Collector current-Continuous 6 A PD Total Power Dissipation@TC... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1034 DESCRIPTION DC Current Gain -h = 4(Min)@ I = 0.75A FE C Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM ... See More ⇒
Detailed specifications: 2SC1026, 2SC1029, 2SC103, 2SC1030, 2SC1030A, 2SC1030B, 2SC1030C, 2SC1031, S9014, 2SC1033, 2SC1033A, 2SC1034, 2SC1035, 2SC1036, 2SC1037, 2SC1038, 2SC1039
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