2SC1037 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1037
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 350 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO62
2SC1037 Transistor Equivalent Substitute - Cross-Reference Search
2SC1037 Datasheet (PDF)
2sc1030.pdf
Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IC Collector current-Continuous 6 A PD Total Power Dissipation@TC
2sc1034.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1034DESCRIPTIONDC Current Gain -h = 4(Min)@ I = 0.75AFE CCollector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in general purpose power amplifier andswitching applicationsABSOLUTE MAXIMUM
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
