2SC1046N Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

2SC1046N Datasheet. Specs and Replacement

Type Designator: 2SC1046N

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 1000 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO3

2SC1046N Substitution

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2SC1046N datasheet

7.1. Size:39K sanyo

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7.2. Size:176K inchange semiconductor

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1046 DESCRIPTION With TO-3 Package High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS for use in horizontal deflection output stages for color TV receives ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co... See More ⇒

8.1. Size:60K panasonic

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Transistor 2SC1047 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 ... See More ⇒

8.2. Size:56K panasonic

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