2SC1046N Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1046N
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 125 °C
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO3
2SC1046N Transistor Equivalent Substitute - Cross-Reference Search
2SC1046N Datasheet (PDF)
2sc1046.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1046DESCRIPTIONWith TO-3 PackageHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSfor use in horizontal deflection output stages forcolor TV receivesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co
2sc1047 e.pdf
Transistor2SC1047Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesOptimum for RF amplification of FM/AM radios.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V 1.27 1.27Collector to emitter voltage VCEO 20
2sc1047.pdf
Transistor2SC1047Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesOptimum for RF amplification of FM/AM radios.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V 1.27 1.27Collector to emitter voltage VCEO 20
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
