2SC1059 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1059
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO66
2SC1059 Transistor Equivalent Substitute - Cross-Reference Search
2SC1059 Datasheet (PDF)
2sc1050.pdf
Silicon Epitaxial Planar Transistor2SC1050GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purposeTO-3QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 300 VCollector-emitter voltage (open base)VCEO - 250 VCollector current
2sc1050.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC1050 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For use in audio and general purpose applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VAL
2sc1051.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC1051 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For low frequency power amplifier and large power switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL
2sc1050.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1050DESCRIPTIONWith TO-3 PackageHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSilicon NPN high frequency,high power transistors in aplastic envelope,primarily for use in audio and generalpurposeABSOLUTE MAXIMUM RATI
2sc1051.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1051DESCRIPTIONWith TO-3 PackageHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor low frequency power amplifier and large powerswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
