2SC1060 Datasheet. Specs and Replacement

Type Designator: 2SC1060  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO218

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2SC1060 datasheet

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2SC1060

isc Silicon NPN Power Transistor 2SC1060 DESCRIPTION With TO-220 package Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.0V(Max)@ I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC convertor General purpose power amplifiers A... See More ⇒

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 8.2. Size:206K  jmnic

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2SC1060

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1061 DESCRIPTION With TO-220 package Low saturation voltage Complement to type 2SA671 Note type 2SC1060 with short pin APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum rat... See More ⇒

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Detailed specifications: 2SC1054, 2SC1055, 2SC1055H, 2SC1056, 2SC1057, 2SC1058, 2SC1059, 2SC106, 2SB688, 2SC1060A, 2SC1061, 2SC1061K, 2SC1062, 2SC1063, 2SC1064, 2SC1065, 2SC1066

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