2SC1065
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1065
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8
W
Maximum Collector-Base Voltage |Vcb|: 90
V
Maximum Collector-Emitter Voltage |Vce|: 60
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 1
A
Max. Operating Junction Temperature (Tj): 175
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package:
TO5
2SC1065
Transistor Equivalent Substitute - Cross-Reference Search
2SC1065
Datasheet (PDF)
8.3. Size:206K jmnic
2sc1061.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC1061 DESCRIPTION With TO-220 package Low saturation voltage Complement to type 2SA671 Note: type 2SC1060 with short pin APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum rat
8.4. Size:216K inchange semiconductor
2sc1061.pdf
isc Silicon NPN Power Transistor 2SC1061DESCRIPTIONLow Collector Saturation Voltage-:V = 1.0(V)(Max)@ I = 2ACE(sat) CDC Current Gain-: h = 35-320 @ I = 0.5AFE CComplement to Type 2SA671Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low frequency power amplifierapplications.ABSOLUTE MAXIMUM RA
8.5. Size:230K inchange semiconductor
2sc1060.pdf
isc Silicon NPN Power Transistor 2SC1060DESCRIPTIONWith TO-220 packageCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.0V(Max)@ I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convertorGeneral purpose power amplifiersA
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