2SC1175 Datasheet and Replacement
Type Designator: 2SC1175
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 45
V
Maximum Collector Current |Ic max|: 0.2
A
Max. Operating Junction Temperature (Tj): 175
°C
Transition Frequency (ft): 170
MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package:
TO92
- BJT Cross-Reference Search
2SC1175 Datasheet (PDF)
8.1. Size:93K toshiba
2sc1173.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.2. Size:69K wingshing
2sc1172.pdf 

NPN TRIPLE DIFFUSED2SC1172 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS (No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector
8.3. Size:143K jmnic
2sc1172.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC1172 DESCRIPTION With TO-3 package High breakdown voltage High speed switching APPLICATIONS For use in color TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAME
8.4. Size:146K jmnic
2sc1170.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC1170 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALU
8.5. Size:154K jmnic
2sc1173.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC1173 DESCRIPTION With TO-220 package Complement to type 2SA473 Collector current :IC=3A Collector dissipation:PC=10W@TC=25 APPLICATIONS Low frequency power amplifier Power regulator PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (T
8.6. Size:176K inchange semiconductor
2sc1172.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1172DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
8.7. Size:176K inchange semiconductor
2sc1170.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1170DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
8.8. Size:129K inchange semiconductor
2sc1170a.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170A DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMET
8.9. Size:192K inchange semiconductor
2sc1173.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1173DESCRIPTIONLow Collector Saturation VoltageComplement to Type 2SA473100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)
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History: DMC205E0
Keywords - 2SC1175 transistor datasheet
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