2SC1227F Datasheet. Specs and Replacement
Type Designator: 2SC1227F
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO3
2SC1227F Substitution
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2SC1227F datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1227 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For clocked voltage converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1226 2SC1226A DESCRIPTION With TO-202 package Complement to type 2SA699/699A APPLICATIONS For medium power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMET... See More ⇒
Detailed specifications: 2SC1222E, 2SC1222F, 2SC1222W, 2SC1223, 2SC1224, 2SC1226, 2SC1226A, 2SC1227, TIP122, 2SC1228, 2SC1228F, 2SC1229, 2SC123, 2SC1230, 2SC1231, 2SC1232, 2SC1233
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