2SC1229 Datasheet. Specs and Replacement
Type Designator: 2SC1229
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 13 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO3
2SC1229 Substitution
- BJT ⓘ Cross-Reference Search
2SC1229 datasheet
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1226 2SC1226A DESCRIPTION With TO-202 package Complement to type 2SA699/699A APPLICATIONS For medium power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMET... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1227 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For clocked voltage converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta... See More ⇒
Detailed specifications: 2SC1223, 2SC1224, 2SC1226, 2SC1226A, 2SC1227, 2SC1227F, 2SC1228, 2SC1228F, BD140, 2SC123, 2SC1230, 2SC1231, 2SC1232, 2SC1233, 2SC1235, 2SC1236, 2SC1237
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