All Transistors. 2SC144A Datasheet

 

2SC144A Datasheet and Replacement


   Type Designator: 2SC144A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 225 MHz
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO18
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2SC144A Datasheet (PDF)

 8.1. Size:180K  inchange semiconductor
 2sc1444.pdf pdf_icon

2SC144A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1444DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 8

 8.2. Size:185K  inchange semiconductor
 2sc1447.pdf pdf_icon

2SC144A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1447DESCRIPTIONLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 8.3. Size:177K  inchange semiconductor
 2sc1441.pdf pdf_icon

2SC144A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1441DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

 8.4. Size:183K  inchange semiconductor
 2sc1449.pdf pdf_icon

2SC144A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1449DESCRIPTIONHigh Collector Current I = 2.0ACCollector-Emitter Breakdown Voltage-: V = 35V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.AB

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History: FMMT723 | 2N3322 | 2SD476N | BULB7216 | GT400-6A | 2SC3574 | BDS18SMD

Keywords - 2SC144A transistor datasheet

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 2SC144A equivalent finder
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