2SC144A
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC144A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36
W
Tensión colector-base (Vcb): 60
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.2
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 225
MHz
Ganancia de corriente contínua (hfe): 35
Paquete / Cubierta:
TO18
Búsqueda de reemplazo de transistor bipolar 2SC144A
2SC144A
Datasheet (PDF)
8.1. Size:180K inchange semiconductor
2sc1444.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1444DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 8
8.2. Size:185K inchange semiconductor
2sc1447.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1447DESCRIPTIONLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
8.3. Size:177K inchange semiconductor
2sc1441.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1441DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
8.4. Size:183K inchange semiconductor
2sc1449.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1449DESCRIPTIONHigh Collector Current I = 2.0ACCollector-Emitter Breakdown Voltage-: V = 35V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.AB
8.5. Size:184K inchange semiconductor
2sc1446.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1446DESCRIPTIONLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
8.6. Size:184K inchange semiconductor
2sc1448.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1448DESCRIPTIONLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
8.7. Size:180K inchange semiconductor
2sc1445.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1445DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1
8.8. Size:177K inchange semiconductor
2sc1440.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1440DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
Otros transistores... 2N3192
, 2N3193
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