All Transistors. 2SC1471A Datasheet

 

2SC1471A Datasheet and Replacement


   Type Designator: 2SC1471A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 5 MHz
   Collector Capacitance (Cc): 1400 pF
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO3
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2SC1471A Datasheet (PDF)

 8.1. Size:51K  panasonic
 2sc1473 e.pdf pdf_icon

2SC1471A

Transistor2SC1473, 2SC1473ASilicon NPN triple diffusion planer typeFor general amplificationUnit: mm2SC1473 complementary to 2SA10185.0 0.2 4.0 0.22SC1473A complementary to 2SA1767FeaturesHigh collector to emitter voltage VCEO.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector t

 8.2. Size:47K  panasonic
 2sc1473.pdf pdf_icon

2SC1471A

Transistor2SC1473, 2SC1473ASilicon NPN triple diffusion planer typeFor general amplificationUnit: mm2SC1473 complementary to 2SA10185.0 0.2 4.0 0.22SC1473A complementary to 2SA1767FeaturesHigh collector to emitter voltage VCEO.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector t

 8.3. Size:47K  hitachi
 2sc1472.pdf pdf_icon

2SC1471A

2SC1472(K)Silicon NPN Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineTO-92 (1)321. Emitter12. Collector3. Base3212SC1472 (K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 40 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 10 VCollector current IC 300 mACollector peak current

 8.4. Size:126K  no
 2sc1475.pdf pdf_icon

2SC1471A

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History: EMG4 | 2SB1144S | BF420A | 2N2473 | BTB1424AT3 | 2N3183 | MM4019

Keywords - 2SC1471A transistor datasheet

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