2SC1472K Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2SC1472K
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 10(max) pF
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO92

2SC1472K Transistor Equivalent Substitute - Cross-Reference Search

2SC1472K Datasheet (PDF)

7.1. Size:47K hitachi
2sc1472.pdf

2SC1472(K)Silicon NPN Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineTO-92 (1)321. Emitter12. Collector3. Base3212SC1472 (K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 40 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 10 VCollector current IC 300 mACollector peak current

8.1. Size:51K panasonic
2sc1473 e.pdf

Transistor2SC1473, 2SC1473ASilicon NPN triple diffusion planer typeFor general amplificationUnit: mm2SC1473 complementary to 2SA10185.0 0.2 4.0 0.22SC1473A complementary to 2SA1767FeaturesHigh collector to emitter voltage VCEO.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector t

8.2. Size:47K panasonic
2sc1473.pdf