2SC1479 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1479
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 16 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO39
2SC1479 Transistor Equivalent Substitute - Cross-Reference Search
2SC1479 Datasheet (PDF)
2sc1473 e.pdf
Transistor2SC1473, 2SC1473ASilicon NPN triple diffusion planer typeFor general amplificationUnit: mm2SC1473 complementary to 2SA10185.0 0.2 4.0 0.22SC1473A complementary to 2SA1767FeaturesHigh collector to emitter voltage VCEO.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector t
2sc1473.pdf
Transistor2SC1473, 2SC1473ASilicon NPN triple diffusion planer typeFor general amplificationUnit: mm2SC1473 complementary to 2SA10185.0 0.2 4.0 0.22SC1473A complementary to 2SA1767FeaturesHigh collector to emitter voltage VCEO.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector t
2sc1472.pdf
2SC1472(K)Silicon NPN Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineTO-92 (1)321. Emitter12. Collector3. Base3212SC1472 (K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 40 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 10 VCollector current IC 300 mACollector peak current
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: HA7632
