All Transistors. 2SC1580 Datasheet

 

2SC1580 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC1580
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 500 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 180 °C
   Transition Frequency (ft): 2.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3

 2SC1580 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC1580 Datasheet (PDF)

 ..1. Size:177K  inchange semiconductor
2sc1580.pdf

2SC1580
2SC1580

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1580DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

 8.1. Size:144K  no
2sc1583.pdf

2SC1580
2SC1580

 8.2. Size:177K  inchange semiconductor
2sc1586.pdf

2SC1580
2SC1580

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1586DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

 8.3. Size:177K  inchange semiconductor
2sc1585.pdf

2SC1580
2SC1580

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1585DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

 8.4. Size:208K  inchange semiconductor
2sc1584.pdf

2SC1580
2SC1580

isc Silicon NPN PowerTransistor 2SC1584DESCRIPTIONHigh Power Dissipation-: P = 150W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOComplement to Type 2SA907Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: FJP13007H2TU-F080 | EMB4 | MMBT4403LT1G | 2SA2198 | 2N3123

 

 
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