2SC1602 Datasheet. Specs and Replacement
Type Designator: 2SC1602 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Package: TO92
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2SC1602 datasheet
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2SC1623 TRANSISTOR (NPN) FEATURE SOT-23 High DC current gain hFE=200(Typ)VCE=6V, IC=1mA High voltage VCEO=50V 1 BASE 2 EMITTER 3 COLLECTOR MARKING L6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Conti... See More ⇒
2SC1623 BIPOLAR TRANSISTOR (NPN) FEATURES High DC current gain h =200(Typ) V =6V,I =1mA FE CE C High voltage V =50V CEO Surface Mount device Complementary to 2SA812 SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless othe... See More ⇒
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Features A SOT-23 L6 C Dim Min Max A 0.37 0.51 B C B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 Maximum Ratings @ T = 25 C unless otherwise specified A J J 0.013 0.1... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1625 DESCRIPTION Silicon NPN planar type Complementary to 2SA815 High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1610 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1624 DESCRIPTION Silicon NPN planar type Complementary to 2SA814 High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1683 DESCRIPTION Silicon NPN triple diffused mesa High breakdown voltage Large collector dissipation Complementary pair with 2SA843 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF power amplifier Color TV vertical deflection output ABSO... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1678 DESCRIPTION Silicon NPN planar type High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1626 DESCRIPTION Silicon NPN planar type Complementary to 2SA816 High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1617 DESCRIPTION Silicon NPN triple diffused type High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Black and white TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1672 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1624 2SC1625 DESCRIPTION With TO-220 package Complement to type 2SA814/815 High breakdown voltage APPLICATIONS Medium power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1618 DESCRIPTION High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1619 DESCRIPTION High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1667 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 90V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Transistor 2SC1623 DESCRIPTION SOT-23 plastic-encapsulate transistors High DC current gain h =200(TYP) FE @V = 6V, I = 1mA CE C High voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency general purpose amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
Detailed specifications: 2SC1596, 2SC1597, 2SC1598, 2SC1599, 2SC16, 2SC160, 2SC1600, 2SC1601, 2N2222A, 2SC1603, 2SC1604, 2SC1605, 2SC1605A, 2SC1606, 2SC1607, 2SC1608, 2SC1609
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BJT Parameters and How They Relate
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BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
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