2SC1608 Datasheet. Specs and Replacement
Type Designator: 2SC1608 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.18 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 243 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO72
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2SC1608 datasheet
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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
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2SC1623 TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value Unit VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V 2. EMITTER 3. COLLECTOR IC Collector Current -C... See More ⇒
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2SC1623 PLASTIC-ENCAPSULATE TRANSISTORS NPN Silicon FEATURES High DC Current Gain hFE=200(Typ.) VCE=6V, IC=1mA High Voltage VCEO = 50V MECHANICAL DATA Available in SOT-23 Package Solderability MIL-STD-202, Method 208 Full RoHS Compliance ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING 2SC1623 - -T3 SOT-23 Tape Reel See Classifica... See More ⇒
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2SC1623 SOT 323 TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ)VCE=6V, IC=1mA High voltage VCEO=50V 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 m... See More ⇒
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RoHS RoHS COMPLIANT COMPLIANT 2SC1623 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Halogen free available upon request by adding suffix HF Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage SOT-23 P Terminals Tin plated leads, solderable per ... See More ⇒
1 2SC1623W TRANSISTOR (NPN) FEATURE SOT- 323 High DC current gain h =200(Typ)V =6V, I =1mA FE CE C High voltage V =50V CEO MARKING L6 MAXIMUM RATINGS (T =25 unless otherwise noted) A Symbol Parameter Value Units V CBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V I Collector Current -Continuous 100 mA C P Collector Power... See More ⇒
2SC1623 TRANSISTOR (NPN) FEATURE SOT-23 High DC current gain hFE=200(Typ)VCE=6V, IC=1mA High voltage VCEO=50V 1 BASE 2 EMITTER 3 COLLECTOR MARKING L6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Conti... See More ⇒
2SC1623 BIPOLAR TRANSISTOR (NPN) FEATURES High DC current gain h =200(Typ) V =6V,I =1mA FE CE C High voltage V =50V CEO Surface Mount device Complementary to 2SA812 SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless othe... See More ⇒
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Features A SOT-23 L6 C Dim Min Max A 0.37 0.51 B C B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 Maximum Ratings @ T = 25 C unless otherwise specified A J J 0.013 0.1... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1625 DESCRIPTION Silicon NPN planar type Complementary to 2SA815 High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1610 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1624 DESCRIPTION Silicon NPN planar type Complementary to 2SA814 High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1683 DESCRIPTION Silicon NPN triple diffused mesa High breakdown voltage Large collector dissipation Complementary pair with 2SA843 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF power amplifier Color TV vertical deflection output ABSO... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1678 DESCRIPTION Silicon NPN planar type High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1626 DESCRIPTION Silicon NPN planar type Complementary to 2SA816 High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1617 DESCRIPTION Silicon NPN triple diffused type High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Black and white TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1672 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1624 2SC1625 DESCRIPTION With TO-220 package Complement to type 2SA814/815 High breakdown voltage APPLICATIONS Medium power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1618 DESCRIPTION High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1619 DESCRIPTION High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1667 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 90V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Transistor 2SC1623 DESCRIPTION SOT-23 plastic-encapsulate transistors High DC current gain h =200(TYP) FE @V = 6V, I = 1mA CE C High voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency general purpose amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
Detailed specifications: 2SC1601, 2SC1602, 2SC1603, 2SC1604, 2SC1605, 2SC1605A, 2SC1606, 2SC1607, A733, 2SC1609, 2SC161, 2SC1610, 2SC1613, 2SC1614, 2SC1615, 2SC1617, 2SC1618
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BJT Parameters and How They Relate
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BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
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