2SC1622D8 Datasheet and Replacement

2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1627 Driver Stage Amplifier Applications Unit: mm Voltage Amplifier Applications Complementary to 2SA817 Driver stage application of 20 to 25 watts amplifiers. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 80 VCollector-emitter voltage VCEO

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DATA SHEETSILICON TRANSISTOR2SC1623AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDFEATURESPACKAGE DIMENSIONS High DC Current Gain: hFE = 200 TYP.in millimeters(VCE = 6.0 V, IC = 1.0 mA)2.8 0.2 High Voltage: VCEO = 50 V1.5 0.65+0.10.15ABSOLUTE MAXIMUM RATINGSMaximum Voltages and Current (TA = 25 C)2Collector to

2SC1623Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingNPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Epitaxial TransistorsMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +15

2SC1623-L5MCCMicro Commercial ComponentsTM2SC1623-L620736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC1623-L7Phone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN SiliconRoHS Compliant. See ordering information) High DC Cu

2SC1623K 0.1A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High DC current gain :hFE=200(Typ), VCE=6V, IC=1mA. AL High Voltage:VCEO=50V. 33Top ViewC BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SC1623K-P 2SC1623K-Y 2SC1623K-G 2SC1623K-B Range 90~

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA 2. EMITTER High voltage:VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOV Collector

2SC1623TRANSISTOR (NPN) FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA High voltage:VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value UnitVCBO 60 V Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V2. EMITTER 3. COLLECTOR IC Collector Current -Continuous 100 mA

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM1623MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 50 Vdc-C

2SC1623 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 60 VCollector-Base Voltage Dimensions in inches and (millimeters)50 VVCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 VI

2SC1627A TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features5.8006.200 Complementary to 2SA817A 8.400Driver Stage Application of 30 to 35 Watts Amplifiers 8.8000.900 1.1000.400MAXIMUM RATINGS(TA=25 unless otherwise noted) 0.60013.80014.200Symbol parameter Value Units VCBO 80 VCollector-Base Voltage 1.500 TYP

2SC1623NPN General Purpose Transistors31P b Lead(Pb)-Free2SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter VoltageVCEO50 VVCBOCollector-Base Voltage 60 VVEBOEmitter-Base Voltage 7 VICCollector Current - Continuous 150 mATotal Device Dissipation FR-5 BoardPD225 mWTA=25C1.8 mW/CDerate above 25CRJAThermal Resistance,

FM120-M WILLAS 2SC1623xLT1THRUGeneral Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize b

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA 2. EMITTER High voltage:VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 60 VCollector-Base Voltage 50 VVCEO Collector

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2SC1623 TRANSISTOR (NPN) FEATURES High voltage:Vceo=50V MARKING:L6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base V

2SC1623T(BR3DG1623T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features h , V 2SA812T(BR3CG812T)FE CEO,High hFE and VCEO, complementary pair with 2SA812T(BR3CG812T). / Applications Audio frequency general amp

2SC1627AF(BR3DG1627AF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features 3035W 2SA817AF(BR3CG817AF) Driver stage of 30 to 35 watts application, complementary pair with 2SA817AF(BR3CG817AF). / Applications

2SC1623W(BR3DG1623W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features h , V 2SA812W(BR3CG812W)FE CEO,High hFE and VCEO, complementary pair with 2SA812W(BR3CG812W). / Applications Audio frequency general a

2SC1623 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features h , V 2SA812 FE CEO,High hFE and VCEO, complementary pair with 2SA812. / Applications Audio frequency general amplifier application.

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPb-Free packkage is availableL2SC1623SWT1GDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Shipping3L2SC1623SWT1G L7 3000/Tape&Reel10000/Tape&ReelL2SC1623SWT3G L712MAXIMUM RATINGSSC-70Rating Symbol Value UnitCollector-Emitter Voltage VCEO 50 VCollector-Base Voltage VCBO 60 V 3COLLECTOREmitter-Base Volt

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL2SC1623QLT1GPb-Free package is availableS- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC1623QLT1GSeriesDEVICE MARKING AND ORDERING INFORMATION3Device Marking Shipping L2SC1623QLT1GL5 3000/Tape&ReelS-L2SC1623QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL2SC1623QLT1GPb-Free package is availableS- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC1623QLT1GSeriesDEVICE MARKING AND ORDERING INFORMATION3Device Marking Shipping L2SC1623QLT1GL5 3000/Tape&Reel S-L2SC1623QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL2SC1623QLT1GPb-Free package is availableS- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC1623QLT1GSeriesDEVICE MARKING AND ORDERING INFORMATION3Device Marking Shipping L2SC1623QLT1GL5 3000/Tape&Reel S-L2SC1623QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL2SC1623QLT1GPb-Free package is availableS- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC1623QLT1GSeriesDEVICE MARKING AND ORDERING INFORMATION3Device Marking Shipping L2SC1623QLT1GL5 3000/Tape&Reel S-L2SC1623QLT1G

LESHAN RADIO COMPANY, LTD.L2SC1623QLT1GGeneral Purpose TransistorsSeriesPb-Free package is availableS- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC1623QLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.SeriesDEVICE MARKING AND ORDERING INFORMATION3Device Marking Shipping L2SC1623QLT1GL5 3000/Tape&Reel S-L2SC1623QLT1

SMD Type TransistorsNPN Transistors2SC1623SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesHigh DC Current Gain:1 2hFE = 200 TYP.+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1VCE = 6.0 V, IC = 1.0 mAHigh Voltage:VCE O = 50 V 1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO 60 VColle

SMD Type TransistorsNPN Transistors2SC1621SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=20V1 2+0.10.95-0.1 0.1+0.05-0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collect

Product specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES High DC current gain:h =200TYP FEPb (V =6.0V,I =1.0mA). CE CLead-free High Voltage:V =50V. CEO MSL 1. APPLICATIONS NPN Silicon Epitaxial Planar Transistor. Audio frequency general purpose amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SC1623

2SC1623TRANSISTOR (NPN) TRANSISTOR (NPN)FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA High voltage:VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value UnitVCBO 60 V Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V2. EMITTER 3. COLLECTOR IC Collector Current -C

RUMW UMW 2SC1623SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA 2. EMITTER High voltage:VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO 60 VCollector-Base Voltage 50 VVCEO Collector-Emitter Voltage VEBO Emitte

2SC1623Plastic-Encapsulate TransistorsNPN SiliconFEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA High voltage:VCEO=50VSOT-23 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit2. EMITTER 3. COLLECTORVCBO 60 VCollector-Base Voltage 50 VVCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 VIC Collector Curren

SOT-23 Plastic-Encapsulate TransistorsFormosa MS 2SC1623 TRANSISTOR (NPN) FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA SOT-23 High voltage:VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit2. EMITTER 3. COLLECTOR VCBO 60 VCollector-Base Voltage 50 VVCEO Collector-Emitter Voltage VEBO Emitter-Base Vol

2SC1623 SOT-23 Plastic-Encapsulate Transistors2SC1623 TRANSISTOR (NPN)SOT-23 FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA High voltage:VCEO=50V 1. BASE2. EMITTERMAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTORSymbol Parameter Value Unit V Collector-Base Voltage 60 V CBOV Collector-Emitter Voltage 50 V CEOVEBO Emitter-Base Voltage 5

www.msksemi.com2SC1623-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA1. BASE High voltage:VCEO=50V2. EMITTERSOT23 3. COLLECTORCLASSIFICATION OF hFE Rank L4 L5 L6 L7Range 90-180 135-270 200-400 300-600Marking L4 L5 L6 L7MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parame

2SC1623PLASTIC-ENCAPSULATE TRANSISTORS NPN Silicon FEATURES High DC Current GainhFE=200(Typ.) VCE=6V, IC=1mA High VoltageVCEO = 50V MECHANICAL DATA Available in SOT-23 Package SolderabilityMIL-STD-202, Method 208 Full RoHS Compliance ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING 2SC1623--T3 SOT-23 Tape Reel See Classifica

2SC1623NPN Transistors3Features21.BaseHigh DC Current Gain:2.EmitterhFE = 200 TYP.1 3.CollectorVCE = 6.0 V, IC = 1.0 mA Simplified outline(SOT-23)High Voltage:VCE O = 50 VAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5 VCollector current (D

Jingdao Microelectronics co.LTD 2SC16232SC1623 SOT-23NPN TRANSISTOR3FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA High voltage:VCEO=50V 12MAXIMUM RATINGS (Ta=25 unless otherwise noted)1.BASESymbolParameter Value Unit 2.EMITTER3.COLLECTORCollectorBase Voltage VCBO 60 VCollectorEmit

2SC1623TRANSISTOR (NPN) FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA High voltage:VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value UnitVCBO 60 V Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V 2. EMITTER 3. COLLECTOR IC Collector Current -Continuous 100 m

2SC1623SOT323 TRANSISTOR (NPN) FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit3. COLLECTOR VCBO 60 VCollector-Base Voltage 50 VVCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 100 m

2SC1623SOT-23 Plastic-Encapsulate Transistors 2SC1623 TRANSISTOR (NPN) FEATURES High voltage:Vceo=50V MARKING:L6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage -

2SC16232SC16232SC16232SC16232SC1623 TRANSISTOR(NPN)FEATURE SOT-23 High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA 1BASE High voltage: VCEO=50V 2EMITTER 3COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 60 VCollector-Base VoltageVCEO 50 VCollector-Emitter VoltageVEBO Emitter-Base Voltage 5 VIC Co

RoHS RoHSCOMPLIANT COMPLIANT 2SC1623 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Halogen free available upon request by adding suffix HF Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage: SOT-23 P Terminals: Tin plated leads, solderable per

12SC1623W TRANSISTOR (NPN)FEATURESOT- 323High DC current gain :h =200(Typ)V =6V, I =1mAFE CE CHigh voltage: V =50VCEOMARKINGL6MAXIMUM RATINGS (T =25 unless otherwise noted)ASymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEOCollector-Emitter Voltage 50 VVEBOEmitter-Base Voltage 5 VI Collector Current -Continuous 100 mACP Collector Power

2SC1623 TRANSISTOR (NPN) FEATURE SOT-23 High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage: VCEO=50V 1BASE 2EMITTER 3COLLECTOR MARKINGL6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 VIC Collector Current -Conti

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGYCO.,LTD2SC1623MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageV 50 VdcCEO-Collector-Base VoltageV 60 VdcCBO-Emitter-Base VoltageV 5.0 VdcEBO-

Silicon Epitaxial Planar Transistor 2SC1623 FEATURES High DC current gain:h =200TYP FEPb (V =6.0V,I =1.0mA). CE CLead-free High Voltage:V =50V. CEO MSL 1. APPLICATIONS NPN Silicon Epitaxial Planar Transistor. Audio frequency general purpose amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SC1623 L4/L5/L6/L7 SOT-23

2SC1623BIPOLAR TRANSISTOR (NPN)FEATURES High DC current gain :h =200(Typ) V =6V,I =1mAFE CE C High voltage:V =50VCEO Surface Mount device Complementary to 2SA812SOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless othe

Features ASOT-23 L6 CDim Min MaxA0.37 0.51B CB1.20 1.40TOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HG1.78 2.05KH2.80 3.00Maximum Ratings @ T = 25C unless otherwise specifiedA JJ0.013 0.1

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1625DESCRIPTIONSilicon NPN planar typeComplementary to 2SA815High breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1624DESCRIPTIONSilicon NPN planar typeComplementary to 2SA814High breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1626DESCRIPTIONSilicon NPN planar typeComplementary to 2SA816High breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1624 2SC1625 DESCRIPTION With TO-220 package Complement to type 2SA814/815 High breakdown voltage APPLICATIONS Medium power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum

INCHANGE Semiconductorisc Silicon NPN Transistor 2SC1623DESCRIPTIONSOT-23 plastic-encapsulate transistorsHigh DC current gain:h =200(TYP)FE@V = 6V, I = 1mACE CHigh voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency general purpose amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMB