2SC1673 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1673
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 7 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 2500 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO92
2SC1673 Transistor Equivalent Substitute - Cross-Reference Search
2SC1673 Datasheet (PDF)
2sc1678.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sc1674.pdf
2SC1674 0.02 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 General Purpose Switching and Amplification G HEmitterCollectorBase JCLASSIFICATION OF hFE A DMillimeter REF.Min. Max.Product-Rank 2SC1674-Y 2SC1674-GR 2SC1674-BLBA 4.40 4
2sc1675.pdf
2SC1675 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Collector Current G H General Purpose Switching and Amplification EmitterBase J CollectorA DCLASSIFICATION OF hFE Millimeter BREF.Min. Max.Product-Rank 2SC1675-R 2SC1
2sc1674.pdf
Transys ElectronicsL I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1674 TRANSISTOR (NPN) TO-92 FEATURE Power dissipation 1. EMITTER PCM: 0. 25 W (Tamb=25) 2. COLLECTOR Collector current 3. BASE ICM: 0.02 A . 1 2 3 Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECT
2sc1675.pdf
2SC1675(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features 2SC1675 is designed for use in AM converter AM/FM if amplifier and local oscillator of AM/FM tuner MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 30 V Dimensions in inches and (millimeter
2sc1674.pdf
2SC1674 Rev.F Apr.-2018 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features ,,High gain bandwidth ,small output capacitance, low noise figure. / Applications ,
2sc1678.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1678DESCRIPTIONSilicon NPN planar typeHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
2sc1672.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1672DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 120V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: EMF18XV6T5 | 2SA206
History: EMF18XV6T5 | 2SA206
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050